power electronics

March 12, 2025 – Qingchun Semiconductor, a rising player in the silicon carbide (SiC) power semiconductor industry, has announced the appointment of Robin Zhang (张三岭) as its Chief Marketing Officer (CMO). Zhang, a seasoned industry expert with over 20 years of experience in analog and power semiconductors, will now oversee the company’s global sales and marketing strategy.

The silicon carbide (SiC) industry is undergoing significant transformations as major players, including ROHM Semiconductor, Wolfspeed, and Sumitomo Electric, adjust their strategies in response to evolving market conditions.

January 9, 2025 – Toyota Gosei Co., Ltd. has announced the successful development of an 8-inch gallium nitride (GaN) single-crystal wafer for vertical transistors, marking a significant milestone in GaN technology. This achievement follows Toyota Gosei's earlier success in manufacturing 6-inch GaN single-crystal wafers, further advancing GaN wafer size and potential applications.

Vishay Intertechnology, a leading manufacturer of discrete semiconductors and passive components, has announced a major investment of £51 million ($69 million) in the Newport Wafer Fab (NWF), located in South Wales. This investment, which will significantly enhance the facility's production capabilities, is part of Vishay’s strategic plan to expand its presence in the semiconductor market, particularly in power devices and silicon carbide (SiC) technologies.

On November 26, 2024, significant updates in silicon carbide (SiC) supply were announced by Chiplink Integrated Technology and ROHM Semiconductor, reflecting advancements in their respective collaborations with major automotive manufacturers.

On November 13, domestic silicon carbide substrate manufacturer Tianyue Advanced unveiled the industry's first 300mm (12-inch) silicon carbide substrate at the Semicon Europe 2024 exhibition in Munich, Germany. This marks a significant step forward for Tianyue Advanced into the era of ultra-large silicon carbide substrates.