On April 10, STMicroelectronics (ST) unveiled a sweeping restructuring initiative targeting its global manufacturing infrastructure, with a focus on next-generation semiconductor technology. This strategic realignment affects eight wafer fabs worldwide, aiming to reinforce ST's leadership in wide bandgap semiconductors such as silicon carbide (SiC). At the same time, competitor onsemi faces market headwinds and is accelerating its transition to a Fab-lite model in response.
8-inch sic wafers
As the silicon carbide (SiC) industry enters a critical development phase in 2025, the shift toward 8-inch wafer production is accelerating. This transformation is fueling increased demand for high-precision semiconductor equipment. Following the successful delivery of 30 sets of SiC epitaxy equipment by CETC (China Electronics Technology Group Corporation), another major development has emerged—Zhongdao Optoelectronics has secured repeat orders from a leading SiC customer for its advanced defect detection systems.
The silicon carbide (SiC) industry is undergoing significant transformations as major players, including ROHM Semiconductor, Wolfspeed, and Sumitomo Electric, adjust their strategies in response to evolving market conditions.
Recent updates from three major power semiconductor factories across the globe have captured industry attention. These include Infineon’s new backend factory in Thailand, a $1.6 billion SiC wafer plant investment in India by Indichip and YMTL, and mass production of 6-inch SiC power semiconductors in Japan by Fuji Electric. These developments highlight the rapid growth and strategic importance of the global power semiconductor industry.
On December 31, 2024, the China Electronics Materials Industry Association announced that Shanxi Shok Science Crystal Co., a subsidiary of CETC Semiconductor Materials Co., has successfully developed 12-inch (300mm) high-purity semi-insulating silicon carbide (SiC) single-crystal substrates. Simultaneously, the company achieved a milestone with the successful development of 12-inch N-type SiC single-crystal substrates.
On December 16, 2024, Jingsheng Mechanical and Electrical Co., Ltd. (Jingsheng) announced the official establishment of its Materials Research Institute in Japan. The new institute is part of the company's ongoing efforts to enhance R&D in silicon, sapphire, and silicon carbide (SiC) semiconductor substrates, further expanding its footprint in the global semiconductor and photovoltaic industries.
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