third-generation semiconductors.

On December 30, 2024, Innoscience Semiconductor (Suzhou) Co., Ltd. (stock code: 02577.HK) officially went public on the Main Board of the Hong Kong Stock Exchange. The company issued 45.364 million H-shares at an offering price of HKD 30.86 per share, raising funds primarily to expand gallium nitride (GaN) production capacity, product portfolio, and application research.

On December 16, 2024, Jingsheng Mechanical and Electrical Co., Ltd. (Jingsheng) announced the official establishment of its Materials Research Institute in Japan. The new institute is part of the company's ongoing efforts to enhance R&D in silicon, sapphire, and silicon carbide (SiC) semiconductor substrates, further expanding its footprint in the global semiconductor and photovoltaic industries.

The third-generation semiconductor material, silicon carbide (SiC), is witnessing rapid progress across multiple regions and companies. Recent updates include new SiC facility plans in Taiwan, supply agreements for electric vehicles, expanded production capacities, and groundbreaking innovations. Here’s a roundup of the latest developments: