As of October 2023, Beijing's government investment fund completed investments in 139 projects across the city, with a key focus on accelerating the development of advanced semiconductor technologies. Among the recipients of this investment is Lattice Field Semiconductor Co., Ltd., a company based in Beijing’s Shunyi district, which is set to expedite its research and production of liquid-phase SiC (Silicon Carbide) substrates.
Focus on Liquid-Phase SiC Substrate R&D
Lattice Field Semiconductor has established a pilot production line for liquid-phase SiC substrates in Shunyi. With the new investment, the company aims to further advance the small-scale production line for SiC substrates, which is expected to be completed by early 2025. This expansion will enable the company to achieve an annual production capacity of 25,000 SiC substrates.
The production line will cover the entire SiC substrate fabrication process, including SiC crystal growth, processing, and testing. Additionally, it will feature 6-8 inch small-scale production lines, with an expected output of 270,000 SiC substrates per year. This move will significantly contribute to the development of new materials and help meet the growing demand for SiC substrates, which are crucial for applications in high-performance power electronics, including electric vehicles and renewable energy systems.
Lattice Field's Innovation in SiC Substrate Technology
Lattice Field Semiconductor stands out as an innovative, high-tech enterprise specializing in the R&D, production, and sales of SiC substrates. The company boasts proprietary liquid-phase SiC crystal growth technology, which helps improve the quality of the crystals while reducing production costs. Their technology allows for the production of high-quality 4H-p-type and 3C-n-type SiC substrates, both of which are in high demand for power electronic devices due to their excellent electrical conductivity, thermal stability, and high voltage tolerance.
The company’s ability to produce both 4H-p-type (commonly used for power devices) and 3C-n-type (which is suitable for RF applications) SiC substrates positions Lattice Field as a key player in the fast-growing SiC semiconductor market. This development is crucial for the growing demand for wide-bandgap semiconductors, especially in sectors such as electric vehicles, renewable energy systems, and 5G infrastructure, where SiC materials offer significant advantages over traditional silicon.
Impact on the SiC Industry and New Materials Development
The investment from the Beijing government underscores the strategic importance of SiC technologies in China’s high-tech sector and new materials industry. By supporting companies like Lattice Field, the government aims to strengthen China’s position in the global semiconductor industry and reduce reliance on foreign SiC substrate suppliers. As Lattice Field ramps up its production capacity, the company is expected to become a significant contributor to the development of advanced semiconductor materials in the country.
This is also a step forward in China’s broader efforts to develop next-generation materials and semiconductor technologies to support emerging industries. With increasing demand for high-power, high-efficiency devices, SiC substrates will play an integral role in shaping the future of the electronic and energy industries.
Conclusion
The investment into Lattice Field Semiconductor marks a significant milestone in the development of liquid-phase SiC substrates, which are essential for the next generation of power electronics. With the expected completion of their new production line by 2025, Lattice Field is set to become a key player in China’s SiC materials industry, driving technological innovation and contributing to the country’s semiconductor sector's growth. As the demand for SiC substrates continues to rise, the company's efforts will help pave the way for a more sustainable and technologically advanced future.
