SIR616DP-T1-GE3
MOSFET N-CH 200V 20.2A PPAK SO-8
NOVA Part#:
312-2287994-SIR616DP-T1-GE3
Manufacturer:
Manufacturer Part No:
SIR616DP-T1-GE3
Standard Package:
3,000
Technical Datasheet:
N-Channel 200 V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® SO-8
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® SO-8 | |
| Base Product Number | SIR616 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | ThunderFET® | |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 50.5mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 7.5 V | |
| FET Feature | - | |
| Package / Case | PowerPAK® SO-8 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 200 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 100 V | |
| Power Dissipation (Max) | 52W (Tc) | |
| Other Names | SIR616DP-T1-GE3CT SIR616DP-T1-GE3DKR SIR616DP-T1-GE3TR |
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