SISS98DN-T1-GE3

MOSFET N-CH 200V 14.1A PPAK
NOVA Part#:
312-2280341-SISS98DN-T1-GE3
Manufacturer:
Manufacturer Part No:
SISS98DN-T1-GE3
Standard Package:
3,000
Technical Datasheet:

N-Channel 200 V 14.1A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package PowerPAK® 1212-8
Base Product Number SISS98
TechnologyMOSFET (Metal Oxide)
SeriesThunderFET®
Current - Continuous Drain (Id) @ 25°C 14.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 7.5 V
FET Feature-
Package / CasePowerPAK® 1212-8
Vgs (Max)±20V
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds 608 pF @ 100 V
Power Dissipation (Max) 57W (Tc)
Other NamesSISS98DN-T1-GE3DKR
SISS98DN-T1-GE3CT
SISS98DN-T1-GE3TR

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