SQJ872EP-T1_GE3
MOSFET N-CH 150V 24.5A PPAK SO-8
NOVA Part#:
312-2280969-SQJ872EP-T1_GE3
Manufacturer:
Manufacturer Part No:
SQJ872EP-T1_GE3
Standard Package:
3,000
Technical Datasheet:
N-Channel 150 V 24.5A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8 Dual
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® SO-8 Dual | |
| Base Product Number | SQJ872 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | Automotive, AEC-Q101, TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 24.5A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 35.5mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | PowerPAK® SO-8 Dual | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 150 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1045 pF @ 25 V | |
| Power Dissipation (Max) | 55W (Tc) | |
| Other Names | SQJ872EP-T1_GE3DKR SQJ872EP-T1_GE3CT SQJ872EP-T1_GE3TR |
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