SCTWA90N65G2V
SILICON CARBIDE POWER MOSFET 650
NOVA Part#:
312-2297758-SCTWA90N65G2V
Manufacturer:
Manufacturer Part No:
SCTWA90N65G2V
Standard Package:
30
Technical Datasheet:
N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | STMicroelectronics | |
| RoHS | 1 | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247 Long Leads | |
| Technology | SiCFET (Silicon Carbide) | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 119A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 18V | |
| Vgs(th) (Max) @ Id | 5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 18 V | |
| FET Feature | - | |
| Package / Case | TO-247-3 | |
| Vgs (Max) | +22V, -10V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3380 pF @ 400 V | |
| Power Dissipation (Max) | 565W (Tc) | |
| Other Names | 497-SCTWA90N65G2V |
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