SCTWA90N65G2V-4

TRANS SJT N-CH 650V 119A HIP247

NOVA Part#:

312-2289944-SCTWA90N65G2V-4

Manufacturer:

Manufacturer Part No:

SCTWA90N65G2V-4

Standard Package:

Technical Datasheet:

N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	STMicroelectronics
RoHS	1
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™ Long Leads
Base Product Number	SCTWA90
Technology	SiCFET (Silicon Carbide)
Series	-
Current - Continuous Drain (Id) @ 25°C	119A (Tc)
Rds On (Max) @ Id, Vgs	24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
FET Feature	-
Package / Case	TO-247-3
Vgs (Max)	+22V, -10V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	3380 pF @ 400 V
Power Dissipation (Max)	565W (Tc)
Other Names	497-SCTWA90N65G2V-4

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