SCTW90N65G2V

SICFET N-CH 650V 90A HIP247
NOVA Part#:
312-2289969-SCTW90N65G2V
Manufacturer:
Manufacturer Part No:
SCTW90N65G2V
Standard Package:
30
Technical Datasheet:

N-Channel 650 V 90A (Tc) 390W (Tc) Through Hole HiP247™

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
RoHS 1
Operating Temperature -55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package HiP247™
Base Product Number SCTW90
TechnologySiCFET (Silicon Carbide)
Series-
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs 25mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 18 V
FET Feature-
Package / CaseTO-247-3
Vgs (Max)+22V, -10V
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 400 V
Power Dissipation (Max) 390W (Tc)
Other Names497-18351

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