Two major Japanese semiconductor companies—ROHM Co., Ltd. and Mitsubishi Electric Corporation—have announced new product lines based on silicon carbide (SiC) technology. These next-generation power modules are designed to serve the growing demands of electric vehicles (EVs) and home appliances, leveraging SiC’s advantages in high voltage resistance, thermal stability, and energy efficiency.
sic mosfet
April 21, 2025 — Two prominent players in the power semiconductor industry, Qingchun Semiconductor and VBsemi, have each announced the launch of their third-generation silicon carbide (SiC) MOSFET product platforms, marking a significant leap forward in high-efficiency fast charging and high-power-density applications.
Infineon Technologies has officially launched its first 8-inch silicon carbide (SiC) products, marking a significant milestone in the company’s efforts to enhance SiC technology adoption. These next-generation power semiconductors, manufactured at Infineon’s Villach facility in Austria, are set to revolutionize high-voltage applications across renewable energy, railway systems, and electric vehicles (EVs).
China's silicon carbide (SiC) industry is witnessing rapid advancements, with two major breakthroughs making headlines: Shoke Crystal’s Phase II production facility is now fully operational, adding 200,000 wafers in annual capacity, and Li Auto has successfully installed its self-developed SiC power chips, marking a new milestone for domestic electric vehicle (EV) technology.
On January 21, the Institute of Microelectronics at the Chinese Academy of Sciences (CAS) announced a significant breakthrough: the successful development of China's first high-voltage radiation-resistant silicon carbide (SiC) power device. This achievement marks a new milestone for China in the field of semiconductor power devices.
Sanan Optoelectronics recently provided updates on its 8-inch silicon carbide (SiC) project progress at Hunan Sanan and Chongqing Sanan through an interactive platform, addressing investor inquiries.
