sic power devices

As the silicon carbide (SiC) industry enters a critical development phase in 2025, the shift toward 8-inch wafer production is accelerating. This transformation is fueling increased demand for high-precision semiconductor equipment. Following the successful delivery of 30 sets of SiC epitaxy equipment by CETC (China Electronics Technology Group Corporation), another major development has emerged—Zhongdao Optoelectronics has secured repeat orders from a leading SiC customer for its advanced defect detection systems.

Recent developments in the silicon carbide (SiC) semiconductor industry have seen two major players, Gree Electric and ChipLink Semiconductor, receiving new utility model patent approvals. These patents reflect ongoing advancements in SiC Schottky semiconductor devices and integrated ultra-barrier rectifiers, crucial for enhancing efficiency in power electronics.

China has successfully validated the use of third-generation semiconductor materials, particularly silicon carbide (SiC) power devices, in space, marking a major milestone for next-generation aerospace power systems. This breakthrough is expected to drive the transition of China's space power technology while reinforcing the nation’s advancements in semiconductor manufacturing.

The silicon carbide (SiC) industry is undergoing significant transformations as major players, including ROHM Semiconductor, Wolfspeed, and Sumitomo Electric, adjust their strategies in response to evolving market conditions.

On December 25, Hangzhou Silan Microelectronics Co., Ltd. (Silan Micro) announced that it had received a government subsidy of 18.37 million RMB on December 24, 2024. This subsidy accounts for 51.35% of the company's audited net profit attributable to shareholders for 2023.

December 18, 2024 – Longsys Advanced's Wuhan Base marked a significant milestone as it welcomed the first batch of equipment into its facilities, signaling the start of its process validation phase. This major step brings the company closer to its goal of achieving full-scale production of silicon carbide (SiC) wafers by May 2025. The project is part of Longsys's strategy to strengthen its leadership in third-generation semiconductor manufacturing.

Mitsubishi Electric is reportedly in discussions with domestic competitors to establish a power semiconductor alliance, according to the company’s CEO, Kei Urushima, in an interview with Bloomberg. This move aims to enhance collaboration in producing these critical components, essential for driving various electronic devices globally.

On December 5th, STMicroelectronics, a global leader in semiconductor manufacturing, announced a significant long-term supply agreement with Ampere, the electric vehicle (EV) manufacturing arm of Renault Group.