sic wafer production

NXP Semiconductors has officially announced a major leadership transition. The company revealed in its latest earnings report that current CEO Kurt Sievers will retire at the end of this year. Effective immediately, Rafael Sotomayor, a current NXP executive, will assume the role of President and will take over as Chief Executive Officer on October 28, 2025.

Fuji Electric has officially begun mass production of 6-inch silicon carbide (SiC) power semiconductors at its semiconductor manufacturing facility in Aomori Prefecture, Japan. This marks a significant step in the company’s efforts to expand its presence in the SiC power semiconductor market.

On December 31, 2024, the China Electronics Materials Industry Association announced that Shanxi Shok Science Crystal Co., a subsidiary of CETC Semiconductor Materials Co., has successfully developed 12-inch (300mm) high-purity semi-insulating silicon carbide (SiC) single-crystal substrates. Simultaneously, the company achieved a milestone with the successful development of 12-inch N-type SiC single-crystal substrates.

On December 16, 2024, Jingsheng Mechanical and Electrical Co., Ltd. (Jingsheng) announced the official establishment of its Materials Research Institute in Japan. The new institute is part of the company's ongoing efforts to enhance R&D in silicon, sapphire, and silicon carbide (SiC) semiconductor substrates, further expanding its footprint in the global semiconductor and photovoltaic industries.

Sanan Optoelectronics recently provided updates on its 8-inch silicon carbide (SiC) project progress at Hunan Sanan and Chongqing Sanan through an interactive platform, addressing investor inquiries.