SI4463BDY-T1-E3

MOSFET P-CH 20V 9.8A 8SO
NOVA Part#:
312-2263165-SI4463BDY-T1-E3
Manufacturer:
Manufacturer Part No:
SI4463BDY-T1-E3
Standard Package:
2,500
Technical Datasheet:

P-Channel 20 V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package 8-SOIC
Base Product Number SI4463
TechnologyMOSFET (Metal Oxide)
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 13.7A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 4.5 V
FET Feature-
Package / Case8-SOIC (0.154", 3.90mm Width)
Vgs (Max)±12V
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Power Dissipation (Max) 1.5W (Ta)
Other NamesSI4463BDYT1E3
SI4463BDY-T1-E3DKR
SI4463BDY-T1-E3TR
SI4463BDY-T1-E3CT

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