SQM120P10_10M1LGE3
MOSFET P-CH 100V 120A TO263
NOVA Part#:
312-2283017-SQM120P10_10M1LGE3
Manufacturer:
Manufacturer Part No:
SQM120P10_10M1LGE3
Standard Package:
800
Technical Datasheet:
P-Channel 100 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-263 (D²Pak) | |
| Base Product Number | SQM120 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | Automotive, AEC-Q101, TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 10.1mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Vgs (Max) | ±20V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V | |
| Power Dissipation (Max) | 375W (Tc) | |
| Other Names | SQM120P10_10M1LGE3-ND SQM120P10 10M1LGE3 SQM120P10_10M1LGE3TR SQM120P10_10M1LGE3CT SQM120P10_10M1LGE3DKR |
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