IPB80N08S2L07ATMA1
MOSFET N-CH 75V 80A TO263-3
NOVA Part#:
312-2361367-IPB80N08S2L07ATMA1
Manufacturer:
Manufacturer Part No:
IPB80N08S2L07ATMA1
Standard Package:
1,000
Technical Datasheet:
N-Channel 75 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3-2 | |
| Base Product Number | IPB80N08 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | OptiMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 80A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 233 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 75 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V | |
| Power Dissipation (Max) | 300W (Tc) | |
| Other Names | IPB80N08S2L07ATMA1CT IPB80N08S2L-07-ND IPB80N08S2L-07 SP000219051 IPB80N08S2L-07DKR-ND IPB80N08S2L07 IPB80N08S2L-07DKR IPB80N08S2L07ATMA1DKR IPB80N08S2L07ATMA1TR IPB80N08S2L-07CT IPB80N08S2L-07CT-ND IPB80N08S2L-07TR-ND |
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