RSJ650N10TL

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Rohm Semiconductor
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LPTS
Base Product Number	RSJ650
Technology	MOSFET (Metal Oxide)
Series	-
Current - Continuous Drain (Id) @ 25°C	65A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	9.1mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	260 nC @ 10 V
FET Feature	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	10780 pF @ 25 V
Power Dissipation (Max)	100W (Tc)
Other Names	RSJ650N10TLDKR RSJ650N10TLCT RSJ650N10TLTR

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