BSZ097N10NS5ATMA1
MOSFET N-CH 100V 8A/40A TSDSON
NOVA Part#:
312-2281177-BSZ097N10NS5ATMA1
Manufacturer:
Manufacturer Part No:
BSZ097N10NS5ATMA1
Standard Package:
5,000
Technical Datasheet:
N-Channel 100 V 8A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TSDSON-8-FL | |
| Base Product Number | BSZ097 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | OptiMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 40A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 3.8V @ 36µA | |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-PowerTDFN | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2080 pF @ 50 V | |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) | |
| Other Names | BSZ097N10NS5ATMA1TR BSZ097N10NS5ATMA1CT BSZ097N10NS5ATMA1DKR SP001132550 |
In stock Please contact us
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
NVTFS010N10MCLTAGonsemi
BSZ096N10LS5ATMA1Infineon Technologies
BSZ150N10LS3GATMA1Infineon Technologies
BSZ146N10LS5ATMA1Infineon Technologies- BSZ068N06NSATMA1Infineon Technologies
ISZ080N10NM6ATMA1Infineon Technologies- BSZ110N08NS5ATMA1Infineon Technologies
- BSC039N06NSATMA1Infineon Technologies
