PHB47NQ10T,118

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Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Nexperia USA Inc.
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Base Product Number	PHB47NQ10
Technology	MOSFET (Metal Oxide)
Series	TrenchMOS™
Current - Continuous Drain (Id) @ 25°C	47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	28mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 10 V
FET Feature	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	3100 pF @ 25 V
Power Dissipation (Max)	166W (Tc)
Other Names	PHB47NQ10T /T3 PHB47NQ10T /T3-ND PHB47NQ10T118 568-5944-6 1727-4767-1 568-5944-6-ND 1727-4767-2 934056745118 568-5944-2-ND PHB47NQ10T,118-ND 568-5944-1-ND 1727-4767-6 568-5944-1 568-5944-2