SQJ211ELP-T1_GE3

MOSFET P-CH 100V 33.6A PPAK SO-8
NOVA Part#:
312-2288006-SQJ211ELP-T1_GE3
Manufacturer:
Manufacturer Part No:
SQJ211ELP-T1_GE3
Standard Package:
3,000
Technical Datasheet:

P-Channel 100 V 33.6A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8 Dual

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package PowerPAK® SO-8 Dual
Base Product Number SQJ211
TechnologyMOSFET (Metal Oxide)
Series-
Current - Continuous Drain (Id) @ 25°C 33.6A (Tc)
Rds On (Max) @ Id, Vgs 30mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
FET Feature-
Package / CasePowerPAK® SO-8 Dual
Vgs (Max)±20V
FET TypeP-Channel
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Other Names742-SQJ211ELP-T1_GE3CT
742-SQJ211ELP-T1_GE3DKR
742-SQJ211ELP-T1_GE3TR

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