SQJ479EP-T1_GE3
MOSFET P-CH 80V 32A PPAK SO-8
NOVA Part#:
312-2280527-SQJ479EP-T1_GE3
Manufacturer:
Manufacturer Part No:
SQJ479EP-T1_GE3
Standard Package:
3,000
Technical Datasheet:
P-Channel 80 V 32A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® SO-8 | |
| Base Product Number | SQJ479 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | Automotive, AEC-Q101, TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | PowerPAK® SO-8 | |
| Vgs (Max) | ±20V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 80 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V | |
| Power Dissipation (Max) | 68W (Tc) | |
| Other Names | SQJ479EP-T1_GE3DKR SQJ479EP-T1_GE3TR SQJ479EP-T1_GE3CT |
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