BSC042NE7NS3GATMA1
MOSFET N-CH 75V 19A/100A TDSON
NOVA Part#:
312-2283004-BSC042NE7NS3GATMA1
Manufacturer:
Manufacturer Part No:
BSC042NE7NS3GATMA1
Standard Package:
5,000
Technical Datasheet:
N-Channel 75 V 19A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TDSON-8-1 | |
| Base Product Number | BSC042 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | OptiMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 100A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 3.8V @ 91µA | |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-PowerTDFN | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 75 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 37.5 V | |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) | |
| Other Names | BSC042NE7NS3 GTR-ND BSC042NE7NS3G 2156-BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1DKR-NDTR-ND BSC042NE7NS3GATMA1TR BSC042NE7NS3 GCT-ND BSC042NE7NS3 G-ND SP000657440 BSC042NE7NS3 GDKR-ND BSC042NE7NS3GATMA1DKR BSC042NE7NS3 G BSC042NE7NS3 GCT BSC042NE7NS3 GDKR BSC042NE7NS3GATMA1CT-NDTR-ND BSC042NE7NS3 GTR BSC042NE7NS3GATMA1CT INFINFBSC042NE7NS3GATMA1 |
In stock Please contact us
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
- SUD50P08-25L-E3Vishay Siliconix
- IPP034NE7N3GXKSA1Infineon Technologies
- BSC042NE7NS3GInfineon Technologies
- SI2377EDS-T1-GE3Vishay Siliconix
- BSC160N15NS5ATMA1Infineon Technologies
- BSC160N10NS3GATMA1Infineon Technologies
- BSC123N08NS3GATMA1Infineon Technologies
- BSC014N04LSATMA1Infineon Technologies
- MAX6070AAUT30+TAnalog Devices Inc./Maxim Integrated







