SIHFL9110TR-GE3
MOSFET P-CH 100V 1.1A SOT223
NOVA Part#:
312-2299364-SIHFL9110TR-GE3
Manufacturer:
Manufacturer Part No:
SIHFL9110TR-GE3
Standard Package:
2,500
Technical Datasheet:
P-Channel 100 V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-223 | |
| Base Product Number | SIHFL9110 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 660mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-261-4, TO-261AA | |
| Vgs (Max) | ±20V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V | |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
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