SI3457CDV-T1-GE3
MOSFET P-CH 30V 5.1A 6TSOP
NOVA Part#:
312-2284990-SI3457CDV-T1-GE3
Manufacturer:
Manufacturer Part No:
SI3457CDV-T1-GE3
Standard Package:
3,000
Technical Datasheet:
P-Channel 30 V 5.1A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-TSOP | |
| Base Product Number | SI3457 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 4.1A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Vgs (Max) | ±20V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 15 V | |
| Power Dissipation (Max) | 2W (Ta), 3W (Tc) | |
| Other Names | SI3457CDV-T1-GE3-ND SI3457CDV-T1-GE3CT SI3457CDV-T1-GE3TR SI3457CDVT1GE3 SI3457CDV-T1-GE3DKR |
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