SI3421DV-T1-GE3
MOSFET P-CH 30V 8A 6TSOP
NOVA Part#:
312-2285025-SI3421DV-T1-GE3
Manufacturer:
Manufacturer Part No:
SI3421DV-T1-GE3
Standard Package:
3,000
Technical Datasheet:
P-Channel 30 V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-TSOP | |
| Base Product Number | SI3421 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 19.2mOhm @ 7A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Vgs (Max) | ±20V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2580 pF @ 15 V | |
| Power Dissipation (Max) | 2W (Ta), 4.2W (Tc) | |
| Other Names | SI3421DV-T1-GE3DKR SI3421DV-T1-GE3TR SI3421DV-T1-GE3CT |
In stock Please contact us
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
SI3407DV-T1-BE3Vishay Siliconix
RQ6E060ATTCRRohm Semiconductor
LTST-C191KGKTLite-On Inc.
LTST-C190KGKTLite-On Inc.
SI3493DDV-T1-GE3Vishay Siliconix- SI3417DV-T1-GE3Vishay Siliconix
- SI3457CDV-T1-GE3Vishay Siliconix
SQ3495EV-T1_GE3Vishay Siliconix
BSS138LT1Gonsemi
DMP3056LDM-7Diodes Incorporated- SI3483DDV-T1-GE3Vishay Siliconix
- SI3483CDV-T1-GE3Vishay Siliconix
TPS73618DBVRTexas Instruments
