SI4455DY-T1-GE3
MOSFET P-CH 150V 2A 8SO
NOVA Part#:
312-2288076-SI4455DY-T1-GE3
Manufacturer:
Manufacturer Part No:
SI4455DY-T1-GE3
Standard Package:
2,500
Technical Datasheet:
P-Channel 150 V 2A (Ta) 5.9W (Tc) Surface Mount 8-SOIC
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOIC | |
| Base Product Number | SI4455 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 295mOhm @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Vgs (Max) | ±20V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 150 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 50 V | |
| Power Dissipation (Max) | 5.9W (Tc) | |
| Other Names | SI4455DY-T1-GE3TR SI4455DY-T1-GE3-ND SI4455DY-T1-GE3DKR SI4455DY-T1-GE3CT |
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