IPP110N20N3GXKSA1

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MOSFET N-CH 200V 88A TO220-3

NOVA Part#:

312-2283649-IPP110N20N3GXKSA1

Manufacturer:

Manufacturer Part No:

IPP110N20N3GXKSA1

Standard Package:

Technical Datasheet:

N-Channel 200 V 88A (Tc) 300W (Tc) Through Hole PG-TO220-3

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Base Product Number	IPP110
Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
Current - Continuous Drain (Id) @ 25°C	88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11mOhm @ 88A, 10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V
FET Feature	-
Package / Case	TO-220-3
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	7100 pF @ 100 V
Power Dissipation (Max)	300W (Tc)
Other Names	IPP110N20N3 G-ND SP000677892 IPP110N20N3 G IPP110N20N3G