IRFB4227PBF

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MOSFET N-CH 200V 65A TO220AB

NOVA Part#:

312-2283491-IRFB4227PBF

Manufacturer:

Manufacturer Part No:

IRFB4227PBF

Standard Package:

Technical Datasheet:

N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Base Product Number	IRFB4227
Technology	MOSFET (Metal Oxide)
Series	HEXFET®
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	24mOhm @ 46A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
FET Feature	-
Package / Case	TO-220-3
Vgs (Max)	±30V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	4600 pF @ 25 V
Power Dissipation (Max)	330W (Tc)
Other Names	SP001565892