IPB180N06S4H1ATMA2

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Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7
Base Product Number	IPB180
Technology	MOSFET (Metal Oxide)
Series	Automotive, AEC-Q101, OptiMOS™
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	270 nC @ 10 V
FET Feature	-
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	21900 pF @ 25 V
Power Dissipation (Max)	250W (Tc)
Other Names	IFEINFIPB180N06S4H1ATMA2 2156-IPB180N06S4H1ATMA2 448-IPB180N06S4H1ATMA2CT SP001028786 448-IPB180N06S4H1ATMA2TR 448-IPB180N06S4H1ATMA2DKR IPB180N06S4H1ATMA2-ND