IPB180N08S402ATMA1

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MOSFET N-CH 80V 180A TO263-7

NOVA Part#:

312-2264377-IPB180N08S402ATMA1

Manufacturer:

Manufacturer Part No:

IPB180N08S402ATMA1

Standard Package:

1,000

Technical Datasheet:

N-Channel 80 V 180A (Tc) 277W (Tc) Surface Mount PG-TO263-7-3

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-3
Base Product Number	IPB180
Technology	MOSFET (Metal Oxide)
Series	Automotive, AEC-Q101, OptiMOS™
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 220µA
Gate Charge (Qg) (Max) @ Vgs	167 nC @ 10 V
FET Feature	-
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	80 V
Input Capacitance (Ciss) (Max) @ Vds	11550 pF @ 25 V
Power Dissipation (Max)	277W (Tc)
Other Names	IPB180N08S402ATMA1DKR IPB180N08S402ATMA1TR SP000983458 IPB180N08S402ATMA1-ND IPB180N08S402ATMA1CT