IAUS200N08S5N023ATMA1
MOSFET N-CH 80V 200A HSOG-8
NOVA Part#:
312-2277830-IAUS200N08S5N023ATMA1
Manufacturer:
Manufacturer Part No:
IAUS200N08S5N023ATMA1
Standard Package:
1,800
Technical Datasheet:
N-Channel 80 V 200A (Tc) 200W (Tc) Surface Mount PG-HSOG-8-1
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-HSOG-8-1 | |
| Base Product Number | IAUS200 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | Automotive, AEC-Q101, OptiMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 3.8V @ 130µA | |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-PowerSMD, Gull Wing | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 80 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 7670 pF @ 40 V | |
| Power Dissipation (Max) | 200W (Tc) | |
| Other Names | IAUS200N08S5N023ATMA1DKR IAUS200N08S5N023ATMA1CT SP001792362 IAUS200N08S5N023ATMA1TR |
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