IPD25N06S4L30ATMA2

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Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-11
Base Product Number	IPD25N06
Technology	MOSFET (Metal Oxide)
Series	Automotive, AEC-Q101, OptiMOS™
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	30mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs	16.3 nC @ 10 V
FET Feature	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max)	±16V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	1220 pF @ 25 V
Power Dissipation (Max)	29W (Tc)
Other Names	IPD25N06S4L30ATMA2TR IPD25N06S4L30ATMA2-ND 2156-IPD25N06S4L30ATMA2 IPD25N06S4L30ATMA2DKR SP001028636 IPD25N06S4L30ATMA2CT IFEINFIPD25N06S4L30ATMA2

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