TPN2010FNH,L1Q
MOSFET N-CH 250V 5.6A 8TSON
NOVA Part#:
312-2287930-TPN2010FNH,L1Q
Manufacturer:
Manufacturer Part No:
TPN2010FNH,L1Q
Standard Package:
5,000
Technical Datasheet:
N-Channel 250 V 5.6A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) | |
| Base Product Number | TPN2010 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | U-MOSVIII-H | |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 198mOhm @ 2.8A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 200µA | |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-PowerVDFN | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 250 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 100 V | |
| Power Dissipation (Max) | 700mW (Ta), 39W (Tc) | |
| Other Names | TPN2010FNHL1QCT TPN2010FNHL1QTR TPN2010FNH,L1Q(M TPN2010FNHL1QDKR |
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