IPD80R2K8CEATMA1
MOSFET N-CH 800V 1.9A TO252-3
NOVA Part#:
312-2291223-IPD80R2K8CEATMA1
Manufacturer:
Manufacturer Part No:
IPD80R2K8CEATMA1
Standard Package:
2,500
Technical Datasheet:
N-Channel 800 V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3 | |
| Base Product Number | IPD80R2 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | CoolMOS™ CE | |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 2.8Ohm @ 1.1A, 10V | |
| Vgs(th) (Max) @ Id | 3.9V @ 120µA | |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 800 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 100 V | |
| Power Dissipation (Max) | 42W (Tc) | |
| Other Names | INFINFIPD80R2K8CEATMA1 SP001130970 IPD80R2K8CEATMA1-ND 2156-IPD80R2K8CEATMA1 IPD80R2K8CEATMA1CT IPD80R2K8CEATMA1DKR IPD80R2K8CEATMA1TR |
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