SI4900DY-T1-E3

MOSFET 2N-CH 60V 5.3A 8-SOIC

NOVA Part#:

303-2249405-SI4900DY-T1-E3

Manufacturer:

Manufacturer Part No:

SI4900DY-T1-E3

Standard Package:

2,500

Technical Datasheet:

Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC

More Information
Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Base Product Number	SI4900
Package / Case	8-SOIC (0.154", 3.90mm Width)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	5.3A
Rds On (Max) @ Id, Vgs	58mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
FET Feature	Logic Level Gate
FET Type	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	60V
Input Capacitance (Ciss) (Max) @ Vds	665pF @ 15V
Power - Max	3.1W
Other Names	SI4900DY-T1-E3TR SI4900DY-T1-E3CT SI4900DYT1E3 SI4900DY-T1-E3DKR

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