SI4900DY-T1-GE3
MOSFET 2N-CH 60V 5.3A 8-SOIC
NOVA Part#:
303-2250828-SI4900DY-T1-GE3
Manufacturer:
Manufacturer Part No:
SI4900DY-T1-GE3
Standard Package:
2,500
Technical Datasheet:
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOIC | |
| Base Product Number | SI4900 | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 5.3A | |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 4.3A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | |
| FET Feature | Logic Level Gate | |
| FET Type | 2 N-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V | |
| Power - Max | 3.1W | |
| Other Names | SI4900DY-T1-GE3DKR SI4900DY-T1-GE3TR SI4900DY-T1-GE3CT SI4900DY-T1-GE3-ND |
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