The third-generation semiconductor material, silicon carbide (SiC), is witnessing rapid progress across multiple regions and companies. Recent updates include new SiC facility plans in Taiwan, supply agreements for electric vehicles, expanded production capacities, and groundbreaking innovations. Here’s a roundup of the latest developments:
Taiwan to Build a New Silicon Carbide Plant
Taiwanese SiC crystal growth company, GetChip, has announced a new factory in Zhongli Industrial Park with an investment of NT$5.7 billion (approximately RMB 1.27 billion). The plant will integrate automation, big data management, and smart energy systems to optimize production and power supply.
The Zhongli factory, inaugurated in October 2023, aims to achieve full production capacity by Q4 2024. It will feature 20 8-inch and 100 6-inch crystal growth furnaces, with a projected monthly output of 5,000 6-inch wafers. GetChip has also partnered with Taiwan's Chung-Shan Institute of Science and Technology to develop high-frequency communication SiC components for 5G/B5G applications.
Chiplink Supplies SiC Modules for NIO’s Lelao L60
Chiplink Integrated Technology is providing silicon carbide modules for NIO’s new EV brand, Lelao. The Lelao L60, featuring a 900V high-voltage architecture, incorporates NIO’s self-developed 1200V SiC power module combined with Chiplink’s manufacturing expertise. This collaboration enhances system efficiency, stability, and driving range.
Earlier this year, Chiplink and NIO signed an agreement designating Chiplink as the exclusive supplier of SiC modules for NIO's 900V EV platform.
ROHM Provides SiC Modules for Valeo’s EV Powertrain
ROHM Semiconductor has partnered with Valeo to develop silicon carbide encapsulated modules, branded as "TRCDRIVE pack," for next-generation traction inverters. Valeo plans to deliver the first batch of these modules in early 2026, expanding its electric mobility portfolio, which includes electric bicycles, cars, and trucks.
Yinxin Micro Opens New SiC Power Module Factory
Yinxin Micro, backed by Shanghai Luxin, officially launched its new facility in Changzhou, focusing on IGBT and SiC power modules. With a capacity to produce 200,000 units per month, the factory specializes in advanced packaging for various module types, including 34mm, 48mm, and 62mm half-bridge designs.
The company, founded in July 2024 with RMB 65 million in capital, aims to strengthen its position in the SiC power device market.
Silan Micro Completes SiC Chip Expansion Project
Xiamen Silan Mingjia has completed the second phase of its SiC power device production line. The project adds annual capacities of 288,000 MOSFET and SBD chips while maintaining epitaxy capabilities for GaN-based blue and green LED chips. The expansion aligns with Silan’s strategic goal of enhancing its presence in the SiC chip sector.
Lingang Dapotech Connects 4/6-Inch SiC Substrate Production Line
Shanghai Lingang-based Dapotech has successfully connected its first 4/6-inch SiC piezoelectric composite substrate production line. This material, combining SiC with other components, is ideal for electronics, photonics, and mechanical industries due to its high hardness and thermal resistance.
Geely’s Phase II Automotive-Grade SiC Facility Begins Construction
Zhejiang Jinneng Microelectronics, a subsidiary of Geely, has commenced Phase II construction of its automotive-grade semiconductor packaging facility in Wenling. Phase I, operational since July 2024, produces 260-390 million Si/SiC devices annually, generating over RMB 200 million in revenue.
Phase II will focus on R&D, production, and sales of automotive-grade power devices, with the facility slated for completion by 2026.
Silicon Carbide Industry: Transformative Growth
The SiC industry continues to grow as demand for third-generation semiconductors surges, driven by applications in electric vehicles, renewable energy, and telecommunications. Investments in capacity expansion, innovative materials, and strategic partnerships underscore the potential for SiC to play a transformative role in the future of high-performance electronics.
