SI4800BDY-T1-GE3

MOSFET N-CH 30V 6.5A 8SO
NOVA Part#:
312-2274313-SI4800BDY-T1-GE3
Manufacturer:
Manufacturer Part No:
SI4800BDY-T1-GE3
Standard Package:
2,500
Technical Datasheet:

N-Channel 30 V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package 8-SOIC
Base Product Number SI4800
TechnologyMOSFET (Metal Oxide)
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs 18.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V
FET Feature-
Package / Case8-SOIC (0.154", 3.90mm Width)
Vgs (Max)±25V
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Power Dissipation (Max) 1.3W (Ta)
Other NamesSI4800BDY-T1-GE3CT
SI4800BDY-T1-GE3TR
SI4800BDY-T1-GE3DKR
SI4800BDYT1GE3

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