EPC2012
GANFET N-CH 200V 3A DIE
NOVA Part#:
312-2314083-EPC2012
Manufacturer:
Manufacturer Part No:
EPC2012
Standard Package:
1,000
Technical Datasheet:
N-Channel 200 V 3A (Ta) - Surface Mount Die
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | EPC | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -40°C ~ 125°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | Die | |
| Technology | GaNFET (Gallium Nitride) | |
| Series | eGaN® | |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 5 V | |
| FET Feature | - | |
| Package / Case | Die | |
| Vgs (Max) | +6V, -5V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 200 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 145 pF @ 100 V | |
| Power Dissipation (Max) | - | |
| Other Names | 917-1017-1 917-1017-6 -917-1017-1 917-1017-2 -917-1017-2 |
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