IPD50N06S4L12ATMA2
MOSFET N-CH 60V 50A TO252-31
NOVA Part#:
312-2287726-IPD50N06S4L12ATMA2
Manufacturer:
Manufacturer Part No:
IPD50N06S4L12ATMA2
Standard Package:
2,500
Technical Datasheet:
N-Channel 60 V 50A (Tc) 50W (Tc) Surface Mount PG-TO252-3-11
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3-11 | |
| Base Product Number | IPD50N06 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | Automotive, AEC-Q101, OptiMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 20µA | |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Vgs (Max) | ±16V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2890 pF @ 25 V | |
| Power Dissipation (Max) | 50W (Tc) | |
| Other Names | INFINFIPD50N06S4L12ATMA2 IPD50N06S4L12ATMA2DKR 2156-IPD50N06S4L12ATMA2 IPD50N06S4L12ATMA2TR SP001028640 IPD50N06S4L12ATMA2CT |
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