SCTW40N120G2V
SILICON CARBIDE POWER MOSFET 120
NOVA Part#:
312-2299714-SCTW40N120G2V
Manufacturer:
Manufacturer Part No:
SCTW40N120G2V
Standard Package:
30
Technical Datasheet:
N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | STMicroelectronics | |
| RoHS | 1 | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | HiP247™ | |
| Technology | SiCFET (Silicon Carbide) | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 18V | |
| Vgs(th) (Max) @ Id | 4.9V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V | |
| FET Feature | - | |
| Package / Case | TO-247-3 | |
| Vgs (Max) | +22V, -10V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1233 pF @ 800 V | |
| Power Dissipation (Max) | 278W (Tc) | |
| Other Names | 497-SCTW40N120G2V |
In stock Please contact us
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
SCT30N120STMicroelectronics
SCTWA60N120G2-4STMicroelectronics
NTH4L040N120SC1onsemi- NVH4L160N120SC1onsemi
