IPB019N06L3GATMA1

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Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Base Product Number	IPB019
Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	2.2V @ 196µA
Gate Charge (Qg) (Max) @ Vgs	166 nC @ 4.5 V
FET Feature	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	28000 pF @ 30 V
Power Dissipation (Max)	250W (Tc)
Other Names	IPB019N06L3 G-ND IPB019N06L3G IPB019N06L3 G IPB019N06L3 GDKR-ND IPB019N06L3GATMA1CT IPB019N06L3 GDKR IPB019N06L3GATMA1TR IPB019N06L3 GCT-ND IPB019N06L3GATMA1DKR IPB019N06L3 GCT IPB019N06L3 GTR-ND SP000453020

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