SQP100P06-9M3L_GE3
MOSFET P-CH 60V 100A TO220AB
NOVA Part#:
312-2306111-SQP100P06-9M3L_GE3
Manufacturer:
Manufacturer Part No:
SQP100P06-9M3L_GE3
Standard Package:
500
Technical Datasheet:
P-Channel 60 V 100A (Tc) 187W (Tc) Through Hole TO-220AB
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Base Product Number | SQP100 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | Automotive, AEC-Q101, TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-220-3 | |
| Vgs (Max) | ±20V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 12010 pF @ 25 V | |
| Power Dissipation (Max) | 187W (Tc) | |
| Other Names | SQP100P06-9M3L_GE3CT-ND SQP100P06-9M3L_GE3CT SQP100P06-9M3L_GE3DKR-ND SQP100P06-9M3L_GE3TR SQP100P06-9M3L_GE3DKR SQP100P06-9M3L_GE3TR-ND SQP100P06-9M3L_GE3TRINACTIVE SQP100P06-9M3L_GE3DKRINACTIVE |
In stock Please contact us
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
IXTP140P05TIXYS
SUP90P06-09L-E3Vishay Siliconix
SUP70101EL-GE3Vishay Siliconix- SQP90P06-07L_GE3Vishay Siliconix
- IXTP96P085TIXYS
IRF4905PBFInfineon Technologies- IXTP120P065TIXYS
- SQP50P03-07_GE3Vishay Siliconix
IPP120P04P4L03AKSA1Infineon Technologies- AUIRF4905Infineon Technologies
