SIA414DJ-T1-GE3
MOSFET N-CH 8V 12A PPAK SC70-6
NOVA Part#:
312-2282456-SIA414DJ-T1-GE3
Manufacturer:
Manufacturer Part No:
SIA414DJ-T1-GE3
Standard Package:
3,000
Technical Datasheet:
N-Channel 8 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® SC-70-6 | |
| Base Product Number | SIA414 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 9.7A, 4.5V | |
| Vgs(th) (Max) @ Id | 800mV @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V | |
| FET Feature | - | |
| Package / Case | PowerPAK® SC-70-6 | |
| Vgs (Max) | ±5V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 8 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 4 V | |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) | |
| Other Names | SIA414DJ-T1-GE3CT SIA414DJ-T1-GE3DKR SIA414DJT1GE3 SIA414DJ-T1-GE3TR |
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