IRFD9110
0.7A 100V 1.200 OHM P-CHANNEL
NOVA Part#:
312-2265445-IRFD9110
Manufacturer:
Manufacturer Part No:
IRFD9110
Standard Package:
1
Technical Datasheet:
P-Channel 100 V 700mA (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Harris Corporation | |
| RoHS | 1 | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP | |
| Base Product Number | IRFD9110 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 700mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 420mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 4-DIP (0.300", 7.62mm) | |
| Vgs (Max) | ±20V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V | |
| Power Dissipation (Max) | 1.3W (Ta) | |
| Other Names | 2156-IRFD9110 HARHARIRFD9110 |
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