IPD70N10S312ATMA1
MOSFET N-CH 100V 70A TO252-3
NOVA Part#:
312-2281847-IPD70N10S312ATMA1
Manufacturer:
Manufacturer Part No:
IPD70N10S312ATMA1
Standard Package:
2,500
Technical Datasheet:
N-Channel 100 V 70A (Tc) 125W (Tc) Surface Mount PG-TO252-3-11
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3-11 | |
| Base Product Number | IPD70N10 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | OptiMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 11.1mOhm @ 70A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 83µA | |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4355 pF @ 25 V | |
| Power Dissipation (Max) | 125W (Tc) | |
| Other Names | IPD70N10S312ATMA1DKR IPD70N10S3-12-ND IPD70N10S3-12CT IPD70N10S3-12DKR-ND IPD70N10S312 IPD70N10S3-12TR-ND IPD70N10S3-12 IPD70N10S3-12CT-ND IPD70N10S312ATMA1TR SP000427248 IPD70N10S3-12DKR IPD70N10S3-12TR IPD70N10S312ATMA1CT |
In stock Please contact us
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
IPD110N12N3GATMA1Infineon Technologies
IPB042N10N3GATMA1Infineon Technologies
SIR882DP-T1-GE3Vishay Siliconix