IXTN32P60P

MOSFET P-CH 600V 32A SOT227B
NOVA Part#:
312-2297901-IXTN32P60P
Manufacturer:
Manufacturer Part No:
IXTN32P60P
Standard Package:
10
Technical Datasheet:

P-Channel 600 V 32A (Tc) 890W (Tc) Chassis Mount SOT-227B

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerIXYS
RoHS 1
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device Package SOT-227B
Base Product Number IXTN32
TechnologyMOSFET (Metal Oxide)
SeriesPolarP™
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 10 V
FET Feature-
Package / CaseSOT-227-4, miniBLOC
Vgs (Max)±20V
FET TypeP-Channel
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds 11100 pF @ 25 V
Power Dissipation (Max) 890W (Tc)

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