SIR576DP-T1-RE3

N-CHANNEL 150 V (D-S) MOSFET POW
NOVA Part#:
312-2296200-SIR576DP-T1-RE3
Manufacturer:
Manufacturer Part No:
SIR576DP-T1-RE3
Standard Package:
3,000
Technical Datasheet:

N-Channel 150 V 11.1A (Ta), 42.4A (Tc) 5W (Ta), 71.4W (Tc) Surface Mount PowerPAK® SO-8

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package PowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
SeriesTrenchFET® Gen IV
Current - Continuous Drain (Id) @ 25°C 11.1A (Ta), 42.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
FET Feature-
Package / CasePowerPAK® SO-8
Vgs (Max)±20V
FET TypeN-Channel
Drain to Source Voltage (Vdss)150 V
Input Capacitance (Ciss) (Max) @ Vds 1870 pF @ 75 V
Power Dissipation (Max) 5W (Ta), 71.4W (Tc)
Other Names742-SIR576DP-T1-RE3CT
742-SIR576DP-T1-RE3DKR
742-SIR576DP-T1-RE3TR

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