SI4840BDY-T1-GE3
MOSFET N-CH 40V 19A 8SO
NOVA Part#:
312-2282251-SI4840BDY-T1-GE3
Manufacturer:
Manufacturer Part No:
SI4840BDY-T1-GE3
Standard Package:
2,500
Technical Datasheet:
N-Channel 40 V 19A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SOIC
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOIC | |
| Base Product Number | SI4840 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 12.4A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 40 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 20 V | |
| Power Dissipation (Max) | 2.5W (Ta), 6W (Tc) | |
| Other Names | SI4840BDY-T1-GE3TR SI4840BDY-T1-GE3DKR SI4840BDYT1GE3 SI4840BDY-T1-GE3-ND SI4840BDY-T1-GE3CT |
In stock Please contact us
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
FDS4470onsemi
AP22653W6-7Diodes Incorporated
CSD19538Q3ATTexas Instruments
HSMG-C170Broadcom Limited
AO4484Alpha & Omega Semiconductor Inc.
PMEG3050EP,115Nexperia USA Inc.
MBR0540T3Gonsemi
SI4840BDY-T1-E3Vishay Siliconix
SN74LVC1G07QDCKTQ1Texas Instruments
