TPN22006NH,LQ
MOSFET N-CH 60V 9A 8TSON
NOVA Part#:
312-2290205-TPN22006NH,LQ
Manufacturer:
Manufacturer Part No:
TPN22006NH,LQ
Standard Package:
3,000
Technical Datasheet:
N-Channel 60 V 9A (Ta) 700mW (Ta), 18W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) | |
| Base Product Number | TPN22006 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | U-MOSVIII-H | |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-PowerVDFN | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 30 V | |
| Power Dissipation (Max) | 700mW (Ta), 18W (Tc) | |
| Other Names | TPN22006NHLQDKR TPN22006NHLQCT TPN22006NHLQTR TPN22006NH,LQ(S TPN22006NHLQ |
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